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Broadband Low Noise Amp 0.45dB NF 0.1GHz to 2GHz 20dB Gain with Bias Tee
Broadband Low Noise Amp 0.45dB NF 0.1GHz to 2GHz 20dB Gain with Bias Tee
Broadband Low Noise Amp 0.45dB NF 0.1GHz to 2GHz 20dB Gain with Bias Tee
Broadband Low Noise Amp 0.45dB NF 0.1GHz to 2GHz 20dB Gain with Bias Tee

Broadband Low Noise Amp 0.45dB NF 0.1GHz to 2GHz 20dB Gain with Bias Tee

$ 98.7

Availability: 15 in stock
  • Restocking Fee: No
  • Country/Region of Manufacture: United States
  • Return shipping will be paid by: Buyer
  • Condition: New
  • All returns accepted: Returns Accepted
  • Refund will be given as: Money Back
  • Item must be returned within: 30 Days
  • MPN: LNA100M2GBT
  • Brand: LOTUS

    Description

    PN#: LNA100M2GBT
    is a high-linearity, ultra low noise amplifier in a small 1-1/8”x15/16”x0.48” shielded RF enclosure (PN: 6UED2W6H41SMAP2). At 900 MHz, the amplifier typically provides 20 dB gain, +36 dBm OIP3 at a 68 mA bias setting, and 0.45 dB noise figure. The LNA can be biased from a single supply +3.3V to +5V. The DC power is fed through output SMA connector. It combines Bias Tee and LNA in one with DC Power via RF output port.
    Listed pictures include Product Picture and S Parameter from 100M to 2GHz. SKU#: AK20-002K. This LNA includes the RF Enclosure as shown in picture.
    Proudly Made in USA by Lotus Communication Systems, INC. in Massachusetts.
    Features
    Frequency Range: 100 MHz to 2 GHz;
    Noise Figure: typical 0.45 dB @ 900MHz
    Gain: 20 dB Gain at 900 MHz
    Output P1dB: +22 dBm CW
    Output IP3: +36 dBm
    DC Voltage: +3.3 to +5V
    Operating Current: 68 mA
    Stainless Steel SMA Female Connector
    High Quality RO4350 RF PCB (very low loss and high thermal performance)
    ROHS Compliant
    Applications
    Repeaters/DAS
    Mobile Infrastructure
    LTE/WCDMA/CDMA/GSM
    General Purpose Wireless
    SDR & Ham Radio
    Test Instrumentation
    Resources (PDF Datasheet)
    https://cdn.shopify.com/s/files/1/1592/7469/files/LNA100M2GBT.pdf